GALLIUM NITRIDE POWER AMPLIFIERS



NEW GaN MMIC

A new GaN HEMT Power amplifier with up to 60% efficiency at 20-watt Psat.

The GaN can operate in a broad frequency range from 30 to 512 MHz.

The housing is a very small 6 x 6 mm QFN.

The device can deliver + 4 watt with better than -25dBc in IM3 in the 450 MHz band.

Evaluations board is available.

 

Link to ASB GaN device

Contact our department for further information