LNA GaAs DEVICE



Gallium Arsenide HEMT devices are used in receivers to amplify weak signals without generating noise.

It is possible to achieve noise figures as low as 0.35-0.5dB at 12GHz with typically 13dB in gain.   

The low-noise GaAs HEMT devices are probably the most suitable semiconductor for high-frequency communication receivers.

Low-noise solutions for satcom application can be found from the S-band to Ka- band.

 

Link to Mitsubishi-Electric LNAs

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